Interface dipole induced threshold voltage shift in the Al2O3/GaN heterostructure

The Al2O3/GaN heterostructure is a crucial component of GaN-based electronic and photonic devices, the interface quality plays an important role in determining device performance. Here, using density functional theory, we confirmed that dipole formed at can be attributed to electron transfer redistribution between Al2O3 GaN. formation was by X-ray photoemission spectroscopy. induced electric field interfaces heterostructures result negative threshold voltage (VTH) shifts 2.3 1.2 V for without defects with one Al interstitial (Ali) defect, respectively. On other hand, Ali defect induce positive charges, resulting VTH shifts. Therefore, improvement (i.e., eliminating defect) does not necessarily This study reveals novel properties offers path toward achievement devices engineered features.